MOS IMPLANTED STRUCTURES IRRADIATED BY HIGH-ENERGY IONS

Ľubica Stuchlíková - Milan Ťapajna - Ladislav Harmatha

    Results from a study of MOS structures implanted with phosphorus at an energy of 120 keV and doses of 6.10¹² cm^-3, 6.10¹¹ cm^-3 and 6.10¹⁰ cm^-3 exposed to 305 MeV Kr and 710 MeV Bi ions radiation with a fluency of 10⁹ cm^-2 and fluency of 10¹⁰ cm^-2 are reported.

Keywords: MOS implanted structures, high-energy heavy ion irradiation, doping profiles, generation lifetime, radiation defect

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