MOS IMPLANTED STRUCTURES IRRADIATED BY HIGH-ENERGY IONS
Ľubica Stuchlíková - Milan Ťapajna - Ladislav Harmatha
Results from a study of MOS structures implanted with phosphorus at an energy
of 120 keV and doses of 6.1012 cm-3, 6.1011
cm-3 and 6.1010 cm-3 exposed to 305 MeV Kr and
710 MeV Bi ions radiation with a fluency of 109 cm-2 and
fluency of 1010 cm-2 are reported.
Keywords: MOS implanted structures, high-energy heavy ion irradiation, doping profiles, generation lifetime, radiation defect