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[05-06, 2003] 

Journal of Electrical Engineering, Vol 54, 05-06 (2003) 147-149

MOS IMPLANTED STRUCTURES IRRADIATED BY HIGH-ENERGY IONS

Ľubica Stuchlíková - Milan Ťapajna - Ladislav Harmatha

    Results from a study of MOS structures implanted with phosphorus at an energy of 120 keV and doses of 6.1012 cm-3, 6.1011 cm-3 and 6.1010 cm-3 exposed to 305 MeV Kr and 710 MeV Bi ions radiation with a fluency of 109 cm-2 and fluency of 1010 cm-2 are reported.

Keywords: MOS implanted structures, high-energy heavy ion irradiation, doping profiles, generation lifetime, radiation defect


[full-paper]


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