AN ASSEMBLY FOR DIAGNOSTICS OF SEMICONDUCTOR STRUCTURES

Peter Gurnik - Ladislav Harmatha

   Development, production and quality control of semiconductor devices is impossible without systematic testing by convenient, non-destructive measurements. These methods have to allow precise and fast measurement, extracting of parameters and suitable data visualization. Our paper is devoted to the description of an automated set-up for capacitance measurements and extraction of desired parameters of some semiconductor structures, with perspective of utilizing in the research of heterostructures. In order to investigate such semiconductor devices as MIS structures and structures with P-N or Schottky contacts we have designed and constructed an apparatus for high frequency equilibrium and depletion C-V methods and for a non-equilibrium C-t method. By means of these methods one can reveal the depth concentration profile of free-carriers and impurities, generation and some other parameters.

Keywords: computer aided measurement, capacitance measurement, semiconductor structures, heterostructures, parameters extraction, data visualization

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