DETERMINATION OF THICKNESS PROFILE OF AlGaAs/GaAs STRUCTURES

Rudolf Srnánek - Ivan Hotový - Ivan Novotný

   The paper presents a procedure for determination of the thickness profile of semiconductor structures. It is based on estimating the layer thicknesses on a set of samples chosen in the desired direction. Samples are bevelled at an angle in the range of approximately 10^-4 rad. After visualizing the layer interfaces on the bevelled surface and measuring the bevel profile, layer thicknesses are estimated. The procedure was used for an AlGaAs/GaAs structure but it is convenient also for other III-V materials.

Keywords: layer thickness, bevel, GaAs, AlGaAs, III-V semiconductor

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