RAMAN SPECTROSCOPY --- A POWERFUL ANALYTICAL TECHNIQUE FOR MICROELECTRONIC INDUSTRY

Ján Janík - Alexander Kromka

   We present ex-situ Micro-Raman monitoring of the surface temperature of silicon wafers. The induced Raman shift (RS) and the full width at half-maximum (FWHM) of the silicon line have been measured in temperature range from 20 to 350°C at air conditions. The Raman signal was collected from the back side of silicon, thus from a relatively rough surface. The obtained results revealed a linear dependence of the line shift and of FWHM on temperature. A possible use of RS as an ex/ - and/or in/-situ technique working at various environment conditions is briefly viewed, where RS is shown as a powerful technique becoming "widely'' used in monitoring and control of the growth processes for microelectronic industry.

Keywords: contact-less temperature measurement, silicon, Raman

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