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[03-04, 2001] 

Journal of Electrical Engineering, Vol 52, 03-04 (2001) 101-103

RAMAN SPECTROSCOPY --- A POWERFUL ANALYTICAL TECHNIQUE FOR MICROELECTRONIC INDUSTRY

Jn Jank - Alexander Kromka

   We present ex-situ Micro-Raman monitoring of the surface temperature of silicon wafers. The induced Raman shift (RS) and the full width at half-maximum (FWHM) of the silicon line have been measured in temperature range from 20 to 350C at air conditions. The Raman signal was collected from the back side of silicon, thus from a relatively rough surface. The obtained results revealed a linear dependence of the line shift and of FWHM on temperature. A possible use of RS as an ex/ - and/or in/-situ technique working at various environment conditions is briefly viewed, where RS is shown as a powerful technique becoming "widely'' used in monitoring and control of the growth processes for microelectronic industry.

Keywords: contact-less temperature measurement, silicon, Raman


[full-paper]


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