ANODIC DISSOLUTION OF SILICON BY ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING

Rudolf Kinder - Juraj Breza - Fedor Mika - Alena Grmanová

   Anodic dissolution of an epitaxial layer and of a boron implanted epitaxial layer in a solution of ammonium bifluoride (NH₄F.HF) has been studied. An optimized set of parameters for carrier concentration N(x) profiling has led to a choice of the bias voltage and determination of the effective valence number of z = 3.3 for the boron implanted epitaxial layer and z = 3.5 for the unimplanted epitaxial layer.

Keywords: ECV technique, current voltage curve, carrier concentration profile, silicon, valence

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