SUBMICROMETER SCALE PHOTOASSISTED WET ETCHING OF n-DOPED GALLIUM NITRIDE

Jaroslava Škriniarová - Hans-Peter Bochem - Andre van der Hart - Alfred Steffen - Hans Lüth - Peter Kordoš

   Photoelectrochemical etching (PEC) was applied to pattern gallium nitride surfaces on submicrometer scale. Sets of grooves having their widths from 0.26 to 1mm were etched at various conditions. The effectiveness of submicrometer PEC etching in a KOH based electrolyte was demonstrated.

Keywords: photoelectrochemical etching, gallium nitride

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