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[03-04, 1997] 

Journal of Electrical Engineering, Vol 48, 03-04 (1997) 85-87

CHEMICAL ETCHING OF InGaP AND GaAs IN SOLUTIONS OF HCl, H3PO4, AND H2O2

Jaroslava Škriniarová et al

   We present the measured etch rates of lattice matched InGaP and GaAs, in HCl : H3PO : H2O2 solutions with variable contents of H3PO4 and H2O2. The content of H3PO4 in the solution affected the etch rates markedly, by contrast, the content of H2O2 had only a weak influence. The ageing of the HCl : H3PO4 : H2O2 (1:10:1) etchant did not alter the etch rate for InGaP, while that for GaAs decreased notably. For this solution we measured the temperature dependence of the etch rate. An increase in temperature from 20 to 44oC resulted into a growth in the etch rate by about a factor of three, which reveals the reaction limited nature of the etch process. Without the presence of H2O2 in the solution one can achieve highly selective etching of InGaP over GaAs. The etch rate for InGaP varied rapidly with the content of HCl in the solutions of x, HCl : H3PO4 and x, HCl : H2O.

Keywords: InGaP, wet etching, etch rate


[full-paper]


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