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[03-04, 1999] 

Journal of Electrical Engineering, Vol 50, 03-04 (1999)

PHYSICO-CHEMICAL PROPERTIES AND ELECTROPHYSICAL CHARACTERISTICS OF NIOBIUM NITRIDE-GALLIUM ARSENIDE HETEROSTRUCTURES

A. A. Belyaev et al

   The effect of interaction between the phases in niobium nitride - gallium arsenide heterostructures upon the contact electrophysical characteristics was studied. It was found that the characteristics depended nonmonotonically on both the percentage of nitrogen in the working mixture and the annealing temperature. This may be related to compositional and structural nonuniformities of the interface.

Keywords: NbN-GaAs heterostructures, physical and chemical properties, electrophysical characteristics, nitrogen content, annealing


[full-paper]


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