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[05-06, 1997] 

Journal of Electrical Engineering, Vol 48, 05-06 (1997) 128-130

DEPTH PROFILING OF SHALLOW BORON-DOPED p-n JUNCTIONS IN SILICON

Adriana Galisová - Juraj Breza - Rudolf Kinder - Jozef Kocanda

   The damage introduced by implantation of B+ and B2+ ions into silicon can have a profound effect on the diffusion of dopants during subsequent rapid thermal anneling. In our study, a set of B+ and B2+ implanted silicon samples have been thermally treated by rapid thermal annealing and depth profiled by secondary ion mass spectrometry.

Keywords: boron implantation, rapid thermal annealing, SIMS depth profiling


[full-paper]


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