DEPTH PROFILING OF SHALLOW BORON-DOPED p-n JUNCTIONS IN SILICON

Adriana Galisová - Juraj Breza - Rudolf Kinder - Jozef Kocanda

   The damage introduced by implantation of B⁺ and B²⁺ ions into silicon can have a profound effect on the diffusion of dopants during subsequent rapid thermal anneling. In our study, a set of B⁺ and B²⁺ implanted silicon samples have been thermally treated by rapid thermal annealing and depth profiled by secondary ion mass spectrometry.

Keywords: boron implantation, rapid thermal annealing, SIMS depth profiling

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