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[05-06, 1997] 

Journal of Electrical Engineering, Vol 48, 05-06 (1997) 144-147

ON MINORITY-CARRIER PARAMETERS IN A HEAVILY DOPED SILICON

S. S. De - A. K. Gosh - A. K. Hajra - J. C. Haldar - M. Bera

   Minority-carrier parameters from silicon are analysed under heavily doping conditions. An expression for minority-carrier current density is obtained in terms of the reduced fermi energy for electrons (holes). This has been utilised to derive other parameters in a different form suitable for device modelling. the theoretical results are made useful to study the variation of the minority-carrier lifetime and current density with impurity concentration. Some results have been compared with earlier works. Moreover, the temperature dependence of the miority-carrier parameters is studied on the basis of the presented analysis.

Keywords: silicon semiconductors, minority-carrier parameters


[full-paper]


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