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[05-06, 1997] 

Journal of Electrical Engineering, Vol 48, 05-06 (1997) 152-156

PREPARATION AND PROPERTIES OF InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

JŠn JakaboviŤ et al

   In0.485Ga0.515PGaAs heterostructure-emitter bipolar transistors with different emitter sizes have been grown by low pressure MOCVD. Their fundamental electrical and optical properties have been investigated. A gain of about 250 has been achieved.

Keywords: HBT, InGaP, GaAs, MOCVD, EBIC, etching


[full-paper]


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