Journal of Electrical Engineering, Vol 48, 05-06 (1997) 152-156
PREPARATION AND PROPERTIES OF InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS
JŠn JakaboviŤ et al
In0.485Ga0.515PGaAs heterostructure-emitter bipolar
transistors with different emitter sizes have been grown by low
pressure MOCVD. Their fundamental electrical and optical properties
have been investigated. A gain of about 250 has been achieved.