PREPARATION AND PROPERTIES OF InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Ján Jakabovič et al

   In_0.485Ga_0.515PGaAs heterostructure-emitter bipolar transistors with different emitter sizes have been grown by low pressure MOCVD. Their fundamental electrical and optical properties have been investigated. A gain of about 250 has been achieved.

Keywords: HBT, InGaP, GaAs, MOCVD, EBIC, etching

[full-paper]