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[07-08, 2005] 

Journal of Electrical Engineering, Vol 56, 07-08 (2005) 217-220


Jozef Liday - Ivan Hotový - Helmut Sitter - Klaus Schmidegg - Peter Vogrinčič - Juraj Breza - Alberta Bonnani

   Auger electron spectroscopy (AES) depth profiling in combination with the circular transmission line method (CTLM) contact resistivity measurements of the Au/NiOx/p-GaN contact scheme with various content of oxygen in the NiOx layer were used to explain the reduction of the contact resistivity as a result of its annealing in oxygen ambient. Au/NiOx layers with a small concentration of oxygen in NiOx were deposited on p-GaN by reactive dc magnetron sputtering and annealed in a mixture of O2 and N2, and in N2 ambient. It was found that the Au/NiOx/p-GaN structure with a low concentration of oxygen in the NiOx layer provides a low resistivity ohmic contact, no matter if it is subsequently annealed in N2 or O2+N2 ambient at 500 °C for 2 minutes. Auger depth profiles reveal that while annealing in O2+N2 ambient results in reconstruction of the initially deposited Au/NiOx/p-GaN contact structure into a NiO/Au/p-NiO/p-GaN structure, annealing in N2 brings about reconstruction into Au+Ni/p-NiO/p-GaN.

Keywords: Auger electron spectroscopy, depth profiling, gallium nitride, nickel oxide


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