ANALYSIS AND PREVENTION OF PHOSPHORUS CONTAMINATION DURING ANTIMONY IMPLANTATION

Marián Kuruc - Ladislav Hulényi - Rudolf Kinder - Andrej Vincze

   The influence of different levels of phosphorus dose in antimony implantation on the depth of p-n junction for a buried layer structure is analysed. Samples implanted on implanters with different levels of phosphorus cross-contamination are characterized by methods like SIMS, spreading resistance analysis (SRP) and simulations by SUPREM software. Experimental determination of the contamination dose from the carrier concentration profiles N_c(x) measured by SRP and simulated N_dt(x) profiles by SUPREM is presented. The use of a sacrificial oxide layer is also discussed and analysed as a possibility for prevention of phosphorus contamination in antimony implantation.

Keywords: ion implantation, cross-contamination, antimony, spreading resistance, SIMS, doping profile

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