DETERMINATION OF CARRIER CONCENTRATION PROFILE OF MOS (pn) STRUCTURES BY THE CAPACITANCE TECHNIQUE

Rudolf Kinder - Ladislav Hulényi

   The carrier concentration profile N(x) of a MOS (pn) structure is measured by the capacitance technique. It is demonstrated that the standard capacitance technique usually used to measure the N(x) profiles of n⁺ⁿ or p^+p samples can be applied to the MOS (pn) structure. Experimental results have been compared with theoretical ones based on the Gaussian distribution, N_G(x), calculated with SUPREM.

Keywords: pn-junction, MOS structure, capacitance method

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