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[09-10, 2000] 

Journal of Electrical Engineering, Vol 51, 09-10 (2000) 249-253

ESTIMATION OF THE ACTIVE REGION IN RADIATION DETECTOR BASED ON SEMI-INSULATING GaAs

Bohumír Zaťko - František Dubecký - Juraj Darmo - Marián Krempaský - Vladimír Nečas

   In this paper a spectroscopy system with a radiation detector operating at room temperature is described. Each element of the spectroscopy system based on semi-insulating (SI) GaAs is depicted. Generation of the output pulse from the semiconductor detector is simulated using a simple circuit model. Results of our simulation are compared with experimental observations.

Keywords: active region, radiation detector, semi-insulating, semiconductor, GaAs, spectroscopy


[full-paper]


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