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[09-10, 1997] 

Journal of Electrical Engineering, Vol 48, 09-10 (1997) 231-235

PREPARATION OF BEVELS ON GaAs - BASED STRUCTURES BY WET CHEMICAL ETCHING

Rudolf Srnánek - Ivan Novotný - Dušan Pudiš

   Solutions consisting of H3PO4, H2O2 and H2O were used for bevel preparation through GaAs-based structures. The values of the bevel angle were in the range from 10-5 to 5.10-4 rad. For different etchant compositions the dependence of the bevel angle on the etchant flow speed was measured and discussed. Surface tension between the etchant and sample was suppressed by applying a layer of deionized water on top of the etchant.

Keywords: bevel, chemical etching, GaAs, III-V semiconductors


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