PREPARATION OF BEVELS ON GaAs - BASED STRUCTURES BY WET CHEMICAL ETCHING

Rudolf Srnánek - Ivan Novotný - Dušan Pudiš

   Solutions consisting of H₃PO₄, H₂O₂ and H₂O were used for bevel preparation through GaAs-based structures. The values of the bevel angle were in the range from 10^-5 to 5.10^-4 rad. For different etchant compositions the dependence of the bevel angle on the etchant flow speed was measured and discussed. Surface tension between the etchant and sample was suppressed by applying a layer of deionized water on top of the etchant.

Keywords: bevel, chemical etching, GaAs, III-V semiconductors

[full-paper]