PREPARATION OF BEVELS ON GaAs - BASED STRUCTURES BY WET CHEMICAL ETCHING
Rudolf Srnánek - Ivan Novotný - Dušan Pudiš
Solutions consisting of H3PO4, H2O2 and H2O
were used for bevel preparation through GaAs-based structures.
The values of the bevel angle were in the range from 10-5
to 5.10-4 rad. For different etchant compositions
the dependence of the bevel angle on the etchant flow speed was
measured and discussed. Surface tension between the etchant and
sample was suppressed by applying a layer of deionized water on
top of the etchant.
Keywords: bevel, chemical etching, GaAs, III-V semiconductors