INFLUENCE OF THE LAYER STAGES ON MBE GROWTH
Dana Papajová - Helmut Sitter - Marián Veselý - Štefan Németh
We present the simulations of Molecular Beam Epitaxial (MBE)
growth using the Temperature Activated - Rate Equation
(TA-RE) model. The result of the model is the size
distribution of two-dimensional islands and surface atoms in
single growing layers, that is used to calculate the time
dependent whole coverage of each growing monolayer. Within the
present approach the MBE growth mode is evaluated by a
calculation of the Reflection-High-Energy-Electron-Diffraction
(RHEED) intensity together with calculation of the interface
width which determines the roughness of the growing surface.
The TA-RE model has been used to study influence of the layer stages (eg nucleation, formation of larger islands, their
coalescence and creation of a coherent layer) on the MBE growth.
We have found out that the nucleation is an important layer
stage in order to obtain layer-by-layer growth.
Keywords: MBE, epitaxial growth, simulation of epitaxial growth, crystal growth, surface roughness, RHEED