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[09-10, 1999] 

Journal of Electrical Engineering, Vol 50, 09-10 (1999)

STRUCTURAL STUDY OF DIAMOND FILMS GROWN ON SILICON WAFER BY HOT-FILAMENT CHEMICAL VAPOUR DEPOSITION METHOD

Viliam Malcher - Ján Janík - Viera Dúbravcová - Alexander Šatka - Pavol Veis

   Diamond films have been grown on mirror-polished single crystal Si(100) by hot-filament chemical vapour deposition. The application of micro-Raman spectroscopy for characterizing carbon bonding in diamond thin films is used. An analysis by micro-Raman shows how the diamond and non- diamond phases are distributed within the film. The phonon line at 1.68 eV has been found. The results are compared with diamond films grown by microwave-plasma chemical vapour deposition.

Keywords: hot-filament chemical vapour deposition, micro-Raman spectroscopy, diamond films


[full-paper]


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