ELECTRICAL RELAXATION RESPONSE OF MISM STRUCTURE MONITORED BY DLTS AND TSD

Drahoslav Barančok - Peter Kluvánek

   Detailed analysis of the thermally stimulated depolarization (TSD) and charge deep level transient (QDLTS) responses of the metal-ideal insulator-high resistivity semiconductor-metal structure is performed. The possible presence of the frequency dependence of electrical conductivity which appears in connection with the hopping of carriers through localized states is consider. Our computer simulations show that the frequency dependent conductivity together with usual dc-conductivity leads to non-exponential responses in both TSD and QDLTS, formally to a time dependent relaxation time constant. Standard methods for evaluating the activation energy of the relaxation processes in such a case provide an erroneous result. We find a process which detects the presence of frequency dependent conductivity in the case of TSD. The QDLTS does not provide such a relatively simple method and the detection of the presence of frequency dependent conductivity is more complicated.

Keywords: thermally stimulated depolarization, ideal insulator, high resistivity

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