INVESTIGATION OF EMISSION AND CAPTURE PROCESSES IN AlGaAs-GaAs HETEROSTRUCTURES BY CAPACITANCE METHODS
Ladislav Harmatha - Ľubica Stuchlíková - Otto Csabay - Ľubomír Hvoždara - Peter Gurnik - I. Thurzo - G. Strasser
We have studied a set of MBE grown AlGaAs-GaAs heterostructures by
capacitance CV, CT, current IV and DLTS measurements. Among the
detected deep energy levels, DX centres have been identified.
Correlations have been observed for individual deep levels with the
positions of maxima in CT dependences. The presence of DX centres
or of a quantum well (QW) has resulted into metastability, as observed
in CV and CT characteristics.
Keywords: AlGaAs-GaAs heterostructures, DLTS measurements, capacitance methods, DX centres, deep levels