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[11-12, 1997] 

Journal of Electrical Engineering, Vol 48, 11-12 (1997) 303-306

INVESTIGATION OF EMISSION AND CAPTURE PROCESSES IN AlGaAs-GaAs HETEROSTRUCTURES BY CAPACITANCE METHODS

Ladislav Harmatha - Ľubica Stuchlíková - Otto Csabay - Ľubomír Hvoždara - Peter Gurnik - I. Thurzo - G. Strasser

   We have studied a set of MBE grown AlGaAs-GaAs heterostructures by capacitance CV, CT, current IV and DLTS measurements. Among the detected deep energy levels, DX centres have been identified. Correlations have been observed for individual deep levels with the positions of maxima in CT dependences. The presence of DX centres or of a quantum well (QW) has resulted into metastability, as observed in CV and CT characteristics.

Keywords: AlGaAs-GaAs heterostructures, DLTS measurements, capacitance methods, DX centres, deep levels


[full-paper]


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