DETERMINATION OF DOPING PROFILES BY AN AUTOMATED ELECTROCHEMICAL CAPACITANCE-VOLTAGE TECHNIQUE

Rudolf Kinder - Juraj Breza - Fedor Mika - Ladislav Hulényi

   An automated electrochemical capacitance-voltage (ECV) analogue technique is described which allows to measure the carrier concentration profiles, N(x), of semiconductor layers. Typical examples of the use of this equipment for semiconductor systems are presented. Comparisons of our results with calculated theoretical profiles according to Gauss, N_G(x), and Pearson IV, N_P(x), distribution functions by program SUPREM are also presented.

Keywords: electrochemical capacitance-voltage technique, automation, carrier concentration profile, Si, InP

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