PERFORMANCE OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT HIGHER AMBIENT TEMPERATURES

Martin Florovič - Peter Kordoš - Daniel Donoval - Dagmar Gregušová - Jaroslav Kováč

   The paper deals with performance evaluation of the AlGaN/GaN heterostructure field-effect transistors (HFETs) at higher ambient temperatures, between 25°C and 425°C. The output and transfer characteristics are continuously degraded with increased temperature. It is found that the saturation drain current, the series resistance and the peak transconductance of devices investigated decrease nearly identically with decreased temperature, if their values are normalized to the particular room temperature values. The decrease from 25°C to 425°C is about 70%. From this result one can conclude that the performance of AlGaN/GaN HFETs investigated at higher ambient temperatures depends on the total drain-source conductance, which includes the channel conductance and the source and drain ohmic contact resistances.

Keywords: computational geometry, Delaunay triangulation, benchmarks

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