GADOLINIUM SCANDATE: NEXT CANDIDATE FOR ALTERNATIVE GATE DIELECTRIC IN CMOS TECHNOLOGY?

Karol Fröhlich – Ján Fedor – Ivan Kostič – Ján Maňka – Peter Ballo

   The films of GdScO₃ were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600°C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO₃/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000°C It is shown, that exact stoichiometry of GdScO₃ is not necessary to achieve dielectric constant above 20.

Keywords: CMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity

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