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[1, 2011] 

Journal of Electrical Engineering, Vol 62, 1 (2011) 54-56

GADOLINIUM SCANDATE: NEXT CANDIDATE FOR ALTERNATIVE GATE DIELECTRIC IN CMOS TECHNOLOGY?

Karol Frhlich – Jn Fedor – Ivan Kosti – Jn Maka – Peter Ballo

   The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000C It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.

Keywords: CMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity


[full-paper]


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