GADOLINIUM SCANDATE: NEXT CANDIDATE FOR ALTERNATIVE GATE DIELECTRIC IN CMOS TECHNOLOGY?
Karol Fröhlich – Ján Fedor – Ivan Kostiè – Ján Maòka – Peter Ballo
The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600°C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000°C It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.
Keywords: CMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity