Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Kateřina Dragounová, Zdeněk Potuček, Štěpán Potocký, Zdeněk Bryknar, Alexander Kromka

   In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11-300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

Keywords: silicon-vacancy centres, photoluminescence, low temperature, diamond, CVD

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