DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE PHOTODIODE

Daniel Haško - Jaroslav Kováč - František Uherek - Jaroslava Škriniarov - Ján Jakabovič - Loránt Peternai

   TAn avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heterointerface. The design of APD structure was verified using the semiconductor device simulation software APSYS. SACM avalanche photodiodes were characterized by measuring current-voltage and capacitance-voltage curves, the speed of response and by photocurrent spectroscopy. The designed SACM APD shows responsivity of 0.85 - 0.9 A/W at 1310 nm for reverse bias voltage 15 V and avalanche gain up to 8 near the breakdown voltage.

Keywords: InGaAs/InGaAsP/InP structure, SACM avalanche photodiode, Electrical and optical characterisation

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