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[4, 2009] 

Journal of Electrical Engineering, Vol 60, 4 (2009) 223-225

INFLUENCE OF MAGNETIC FIELD ON ELECTRICAL RESISTANCE AND MAGNETIC ORDERING TEMPERATURES IN HOLMIUM THIN FILMS

Ján Dudáš - Slavomír Gabáni - Viktor Kavečanský - Jozef Bagi

   The influence of magnetic field on the electrical resistance and magnetic ordering temperature TN in Ho thin films is reported. X-ray diffraction investigation of these films revealed two phases composition consisting of the prevailing hexagonal Ho (space group P63 /mmc) and small but inessential content of cubic holmium dihydride HoH2 (Fm3m) with preferential crystal orientation in these films. Electrical resistance measurements on Ho films in the thickness range from 98 nm to 215 nm showed a "knee-like" resistance anomaly near the TN. Magnetic field applied parallel to the thin film plane caused an increasing suppression of the TN value up to 5 K with increasing flux density value up to 5 T.

Keywords: electrical resistivity, Neél temperature, holmium thin films, X-ray diffraction


[full-paper]


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