INFLUENCE OF MAGNETIC FIELD ON ELECTRICAL RESISTANCE AND MAGNETIC ORDERING TEMPERATURES IN HOLMIUM THIN FILMS

Ján Dudáš - Slavomír Gabáni - Viktor Kavečanský - Jozef Bagi

   The influence of magnetic field on the electrical resistance and magnetic ordering temperature T_N in Ho thin films is reported. X-ray diffraction investigation of these films revealed two phases composition consisting of the prevailing hexagonal Ho (space group P6₃ /mmc) and small but inessential content of cubic holmium dihydride HoH₂ (Fm3m) with preferential crystal orientation in these films. Electrical resistance measurements on Ho films in the thickness range from 98 nm to 215 nm showed a "knee-like" resistance anomaly near the T_N. Magnetic field applied parallel to the thin film plane caused an increasing suppression of the T_N value up to 5 K with increasing flux density value up to 5 T.

Keywords: electrical resistivity, Neél temperature, holmium thin films, X-ray diffraction

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