CHARACTERIZATION OF ELECTRICAL TRANSPORT IN LSMO WITH ENHANCED TEMPERATURE OF METAL-INSULATOR TRANSITION

Vladimír Štrbík – Štefan Chromik

   We have studied La_0.67Sr_0.330MnO₃ (LSMO) thin films with temperature of metal-insulator (T_MI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range around T_MI very well agreement was found. We found out that the Debye's temperature was also increased (Θ_D ~840 K) probably due to the change in crystallization of LSMO films.

Keywords: LSMO thin film, electrical transport, Debye temperature

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