CHARACTERIZATION OF ELECTRICAL TRANSPORT IN LSMO WITH ENHANCED TEMPERATURE OF METAL-INSULATOR TRANSITION
Vladimír Štrbík – Štefan Chromik
We have studied La0.67Sr0.330MnO3 (LSMO) thin films with temperature of metal-insulator (TMI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range around TMI very well agreement was found. We found out that the Debye's temperature was also increased (ΘD ~840 K) probably due to the change in crystallization of LSMO films.
Keywords: LSMO thin film, electrical transport, Debye temperature