LOW-FREQUENCY NOISE MEASUREMENTS USED FOR QUALITY ASSESSMENT OF G\LOWERCASE{A}S\LOWERCASE{B} BASED LASER DIODES PREPARED BY MOLECULAR BEAM EPITAXY

Zdeněk Chobola – Miroslav Luňák – Jiří Vaněk – Eduard Hulicius – Ivo Kusák

   The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

Keywords: side-channel-attacks, correlation power analysis, Hamming distance power model, DSA, ECDSA, PKI

[full-paper]