EFFECT OF ANNEALING ON ELECTRICAL CHARACTERISTICS OF PLATINUM BASED SCHOTTKY CONTACTS TO N-GaN LAYERS

Wojciech Macherzyński - Bogdan Paszkiewicz - Adam Szyszka - Regina Paszkiewicz - Marek Tłaczała

   The contacts were annealed at RTA (Rapid Thermal Annealing) system in the mixture of hydrogen/nitrogen (1:10) gases over the temperature range from 200°C to 700°C. The time of annealing process was 20 seconds. The electrical characteristics of gold/platinum/titanium Schottky contacts to n-GaN MOVPE epitaxial layer were studied as a function of the annealing process conditions by current-voltage (I-V) method on dedicated test structures. The barrier heights of the Au/Pt/Ti/n-GaN Schottky junctions were evaluated. The formation and deterioration mechanisms of the Schottky contacts to n-GaN layer were studied.

Keywords: Schottky barrier height, Au/Pt/Ti Schottky contact, gallium nitride

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