advanced
Journal Information
Journal Information
   Description
   Editorial Board
   Guide for Authors
   Ordering

Contents Services
Contents Services
   Regular Issues
   Special Issues
   Authors Index

Links
Links
   FEI STU Bratislava
   SAS Bratislava

   Feedback

[5, 2009] 

Journal of Electrical Engineering, Vol 60, 5 (2009) 276-278

EFFECT OF ANNEALING ON ELECTRICAL CHARACTERISTICS OF PLATINUM BASED SCHOTTKY CONTACTS TO N-GaN LAYERS

Wojciech Macherzyński - Bogdan Paszkiewicz - Adam Szyszka - Regina Paszkiewicz - Marek Tłaczała

   The contacts were annealed at RTA (Rapid Thermal Annealing) system in the mixture of hydrogen/nitrogen (1:10) gases over the temperature range from 200°C to 700°C. The time of annealing process was 20 seconds. The electrical characteristics of gold/platinum/titanium Schottky contacts to n-GaN MOVPE epitaxial layer were studied as a function of the annealing process conditions by current-voltage (I-V) method on dedicated test structures. The barrier heights of the Au/Pt/Ti/n-GaN Schottky junctions were evaluated. The formation and deterioration mechanisms of the Schottky contacts to n-GaN layer were studied.

Keywords: Schottky barrier height, Au/Pt/Ti Schottky contact, gallium nitride


[full-paper]


© 1997-2019  FEI STU Bratislava