OPTICAL PROPERTIES OF RE-CRYSTALLIZED POLYCRYSTALLINE SILICON THIN FILMS FROM a-Si FILMS DEPOSITED BY ELECTRON BEAM EVAPORATION
Marie Netrvalová – Veronika Vavruòková – Jarmila Müllerová – Pavol utta
This paper deals with the structural and optical properties of the polycrystalline silicon films initially deposited in amorphous state by electron beam evaporation technology on a Corning glass and consequently thermally re-crystallized from solid phase. The re-crystallization process was ``in situ'' monitored by X-ray diffraction using an evacuated high temperature chamber at temperatures from 590°C to 650°C. Optical properties of the films carried out from the optical spectrophotometry recorded in a visible range of electromagnetic spectra were then confronted with the micro-structure parameters of the films. Relationships between the crystalline/amorphous composition, crystallite size, optical band-gaps and spectral extinction coefficients are clearly demonstrated.
Keywords: optical properties, a-Si thin films, annealing