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[5, 2009] 

Journal of Electrical Engineering, Vol 60, 5 (2009) 279-282

OPTICAL PROPERTIES OF RE-CRYSTALLIZED POLYCRYSTALLINE SILICON THIN FILMS FROM a-Si FILMS DEPOSITED BY ELECTRON BEAM EVAPORATION

Marie Netrvalová – Veronika Vavruòková – Jarmila Müllerová – Pavol Šutta

   This paper deals with the structural and optical properties of the polycrystalline silicon films initially deposited in amorphous state by electron beam evaporation technology on a Corning glass and consequently thermally re-crystallized from solid phase. The re-crystallization process was ``in situ'' monitored by X-ray diffraction using an evacuated high temperature chamber at temperatures from 590°C to 650°C. Optical properties of the films carried out from the optical spectrophotometry recorded in a visible range of electromagnetic spectra were then confronted with the micro-structure parameters of the films. Relationships between the crystalline/amorphous composition, crystallite size, optical band-gaps and spectral extinction coefficients are clearly demonstrated.

Keywords: optical properties, a-Si thin films, annealing


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