MICROSCALE CHARACTERISATION OF OPTICAL AND ELECTRICAL PARAMETERS OF UV GaN PLANAR DETECTORS
Adam Szyszka – Bogdan Paszkiewicz – Wojciech Macherzyński – Regina Paszkiewicz – Marek Tłaczała
Optical Beam Induced Current technique and Scanning Surface Potential Microscopy were applied for characterisation of spatial properties of detectors fabricated in heteroepitaxial gallium nitride layers. It was observed that on the performance of detectors both: columnar structure of GaN layers and electrical characteristic of metal contacts had an influence.
Keywords: gallium nitride, photoresistor, MSM detector, OBIC, SSPM