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[5, 2014] 

Journal of Electrical Engineering, Vol 65, 5 (2014) 299-303, DOI: 10.2478/jee-2014-0048

STRUCTURAL CHARACTERIZATION OF DOPED THICK GaInAs LAYERS --- AMBIGUITIES AND CHALLENGES

Damian Pucicki – Katarzyna Bielak – Beata Ściana – Wojciech Dawidowski – Karolina Żelazna – Jarosław Serafińczuk – Jaroslav Kováč – Andrej Vincze – Łukasz Gelczuk – Piotr Dłużewski

   GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside the applications, where those materials are used as thin quantum wells (QWs), there are the needs to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. Determination of indium and nitrogen contents in GaInNAs quantum wells is often based on the analysis of high-resolution X-ray diffraction (HRXRD) measurements, which often are not sufficient for correct characterization. The HRXRD curve simulations supported by bandgap or energetic structure determination and calculations seem to be a solution to this problem. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented.

Keywords: dilute nitrides, GaInNAs, composition determination, HRXRD


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