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[5, 2015] 

Journal of Electrical Engineering, Vol 66, 5 (2015) 277-281 DOI: 10.1515/jee-2015-0045

FABRICATION AND CHARACTERIZATION OF N-TYPE ZINC OXIDE/P-TYPE BORON DOPED DIAMOND HETEROJUNCTION

Marián Marton – Miroslav Mikolášek – Jaroslav Bruncko – Ivan Novotný – Tibor Ižák
– Marian Vojs – Halyna Kozak – Marián Varga – Anna Artemenko – Alexander Kromka

   Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ± 4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Keywords: boron doped diamond, zinc oxide, Raman spectroscopy, bipolar heterostructure, wide-bandgap


[full-paper]


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