Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Martin Florovič – Robert Szobolovszký – Jaroslav Kováč – Jr. – Jaroslav Kováč –
Aleš Chvála – Jean-Claude Jacquet – Sylvain Laurent Delage

   GaN-based HEMTs' high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

Keywords: high-electron-mobility transistor (HEMT), AlGaN/GaN

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