ANALYSIS AND CORRECTION OF CARRIER SPILLING EFFECT FOR DIFFERENT Si STRUCTURES

Marián Kuruc - Ladislav Hulényi - Rudolf Kinder

   In this article we present a method for basic correction of carrier concentration profiles measured by the spreading resistance technique for the carrier spilling effect. It is shown how to calculate carrier distribution on the bevelled surface and what is the effect of the bevel on the distribution of free charge carriers. We also present how carrier spilling affects different silicon structures and whether the so-called zero field correction is sufficient. This is done on several typical silicon structures used in semiconductor technology. For comparison we used SIMS N_D(x) profiles and theoretical N_t(x) profiles simulated by DIOS.

Keywords: spreading resistance, carrier spilling, doping profile, carrier concentration profile, on-bevel profile, zero field correction, simulation, bevel

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