PREDICTIVE SYNCHRONOUS GENERATOR EXCITATION CONTROL BASED ON LAGUERRE MODEL

Robert Andok – Anna Benčurová – Pavol Hrkút – Anna Konečníková –
Ladislav Matay – Pavol Nemec – Jaroslava Škriniarová

   In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N₂ plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.

Keywords: AZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates

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