Fabrication and Characterization of Si/SiO₂/TiO₂/ZnO Heterostructures from Sputtered
and Oxidized Ti Film

Jaroslav Kováč – Martin Florovič – Andrej Vincze – Edmund Dobročka – Ivan Novotný
– Miroslav Mikolášek – Jaroslava Škriniarová

   The present work reports the fabrication of p-Si/SiO₂/TiO₂ and p-Si/SiO₂/TiO₂/ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I-V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I-V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I-V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO₂/TiO₂ interlayer.

Keywords: SIS heterostructures, thin films, Ga-doped ZnO, TiO₂, Si, SIMS, I-V characteristics, spectroscopy

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