Temperature dependence of photoluminescence peaks of porous silicon structures

Róbert Brunner – Emil Pincik – Michal Kučera – Ján Greguš – Pavel Vojtek – Zuzana Zábudlá

   Evaluation of photoluminescence spectra of porous silicon (PS) samples prepared by electrochemical etching is presented. The sample were measured at temperatures 30, 70 and 150 K. Peak parameters (energy, intensity and width) were calculated. PL spectrum was approximated by set of Gaussian peaks. Their parameters were fixed using fitting procedure, optimal number of peeks included into model was estimated using residuum of the approximation. Small thermal dependence of spectra indicates the strong influence of active defects.

Keywords: porous silicon, photoluminescence spectrum, Gaussian peaks, spectra evaluation

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