Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

Arpad Kosa – Beata Sciana – Lubica Stuchlikova

   This article discusses the importance of analytical and experimental approaches in Deep Level Transient Fourier Spectroscopy in terms of reliability, to support the current research and the utilization of this technique for complex investigations. An alternative evaluation approach is proposed and validated by relevant experiments. Attention is focused on a GaAs p-i-n structure, the undoped layer induced defect conduction type statement difficulty, accurate evaluation of a dual type majority-minority carrier defect complex and possible limitations of the DLTS experimental technique. Comprehensive evaluation is carried out and the method is discussed in detail. In comparison with reference data, higher precision of calculated activation energies, differences even lower as 10^-3 order of magnitude, were achieved.

Keywords: deep level transient Fourier spectroscopy, Arrhenius data analysis, electrically active defects, GaAs p-i-n, deep energy level

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