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[03-04, 2001] 

Journal of Electrical Engineering, Vol 52, 03-04 (2001) 105-116

TRENDS IN DEVELOPING OF NEW SEMICONDUCTOR POWER DEVICES BASED ON SiC AND DIAMOND MATERIALS

Tomislav Brodic

   In this article, silicon carbide and diamond are presented as materials of the future for semiconductor power device manufacturing. An overview of their properties and drawbacks is given for a comparison with the so far used silicon. Unipolar and bipolar devices based on silicon carbide as the most acceptable material for commercial manufacturing are analysed. Diamond is a promising material for application in high-power electronics and high temperature electronics. Characteristic values of devices are shown along with their best-achieved performances. An estimate of possible progress in the research and manufacturing of semiconductor power devices based on the new materials is given.

Keywords: SiC power devices, SiC unipolar power devices, SiC bipolar power devices, diamond power devices, diamond unipolar power devices, diamond bipolar power devices


[full-paper]


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