TRENDS IN DEVELOPING OF NEW SEMICONDUCTOR POWER DEVICES BASED ON SiC AND DIAMOND MATERIALS
In this article, silicon carbide and diamond are presented as
materials of the future for semiconductor power device
manufacturing. An overview of their properties and drawbacks is
given for a comparison with the so far used silicon. Unipolar
and bipolar devices based on silicon carbide as the most
acceptable material for commercial manufacturing are analysed.
Diamond is a promising material for application in high-power
electronics and high temperature electronics. Characteristic
values of devices are shown along with their best-achieved
performances. An estimate of possible progress in the research
and manufacturing of semiconductor power devices based on the
new materials is given.
Keywords: SiC power devices, SiC unipolar power devices, SiC bipolar power devices, diamond power devices, diamond unipolar power devices, diamond bipolar power devices