FAST DETERMINATION OF GENERATION PARAMETERS OF MOS STRUCTURES

Milan Ťapajna - Peter Gurnik - Ladislav Harmatha

   In this article we describe the design and realisation of computer controlled measurement for determination of the minority carrier lifetime using the constant capacitance-time method (cC-t). Unlike the Zerbst method, the cC-t technique does not require the acquisition of the entire capacitance-time curve or the derivative of the experimental data. The usage of the cC-t technique considerably reduces the data-acquisition time, especially for devices with high lifetimes. One can also obtain lifetime profiles for non-uniformly doped samples.

Keywords: MOS structure, capacitance measurement, minority carrier lifetime

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