DETERMINATION OF CARRIER PROFILES ON BEVELLED GaAs STRUCTURES BY PCIV METHOD
Rudolf Kinder - Rudolf Srnánek - Ladislav Hulényi - Jarmila Walachová - Marek Tlaczala - Beata ciana - Damian Radziewicz
Determination of free charge carrier profiles of GaAs on a bevelled surface by
the PCIV is presented. The bevelled structures were prepared by chemical
etching. The results are compared with the electrochemical capacitance-voltage
technique. Some specific problems concerning of measurement of carrier profiles
and calibration PCIV method are discussed.
Keywords: PCIV, ECV, GaAs, free carrier concentration, bevelled structure