DETERMINATION OF CARRIER PROFILES ON BEVELLED GaAs STRUCTURES BY PCIV METHOD

Rudolf Kinder - Rudolf Srnánek - Ladislav Hulényi - Jarmila Walachová - Marek Tlaczala - Beata Ściana - Damian Radziewicz

   Determination of free charge carrier profiles of GaAs on a bevelled surface by the PCIV is presented. The bevelled structures were prepared by chemical etching. The results are compared with the electrochemical capacitance-voltage technique. Some specific problems concerning of measurement of carrier profiles and calibration PCIV method are discussed.

Keywords: PCIV, ECV, GaAs, free carrier concentration, bevelled structure

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