COMPARISON OF A STANDARD AND A SCHOTTKY DUAL GATE MOSFET

Juraj Racko - Ralf Granzner - Frank Schwierz - Juraj Breza - Daniel Donoval - Ondrej Kučera - Peter Pinteš

   The article presents modelling and simulation of the electrical properties of Schottky dual gate (DG) MOSFET structures. The contribution focuses on the influence of the design parameters upon the properties of the DG MOSFET. The design parameters strongly affect the slope of the transfer characteristics and the magnitude of leakage currents because in nanometer structures they have a substantial influence on band-to-band tunnelling in the vicinity of the drain. The active region of the transistor structure must be viewed upon as a quantum well whose parameters affect the effective bandgap width, which in turn has a key influence in the model of band-to-band tunnelling.

Keywords: Schottky dual gate, MOSFET

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