A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

Mourad Hebali – Menaouer Bennaoum – Mohammed Berka – Abdelkader Baghdad Bey – Mohammed Benzohra – Djilali Chalabi – Abdelkader Saidane

   In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I-V and g_m-V characteristics and subthreshold operation of the DG-MOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the Single Gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of order 1 pA, very high ON/OFF ratio of order and high subthreshold slope SS below 0.1V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

Keywords: 4H-SiC, 6H-SiC, BSIM3v3, DG-MOSFET, 130 nm technology, I-V characteristics, subthreshold operation

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