MAGNETIC FET-BASED ON-CHIP CURRENT SENSOR FOR CURRENT TESTING OF LOW-VOLTAGE CIRCUITS

Martin Donoval - Martin Daříček - Viera Stopjaková - Daniel Donoval

   A new built-in current sensor design using the magnetic force of a magnetic FET (MAGFET) is presented. Theoretical background together with special features and physical implementation of single individual parts of the sensor as well as specific shapes and their individual advantages are described in details. The proposed sensor is aimed to be used for current testing in deep-submicron circuits with ultra low-voltage power supply (below 2 V). The main advantage of the proposed sensor is elimination of the undesired supply voltage reduction, commonly created by standard current test methods. Description of two different sensor shapes, sensor design and its physical implementation on the chip is presented. The different sensor shapes evaluation results are finally compared in order to obtain the highest possible sensitivity of the structure. Both sensor versions were fabricated in a selected 1 &mu m BiCMOS technology.

Keywords: MAGFET, magnetic force field effect transistor, integrated magnetic sensor, built-in current sensor, IDD testing

[full-paper]