CAPACITANCE ANALYSIS OF THE STRUCTURES WITH THE a-Si:H(i)/c-Si(p) HETEROJUNCTION FOR SOLAR-CELL APPLICATIONS
Miroslav Mikolášek – Ján Jakabovič – Vlastimil Řeháček – Ladislav Harmatha – Robert Andok
In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 ×1021m-3.
Keywords: capacitance-voltage measurements, a-Si:H(i)/c-Si(p) heterojunction, Si heterojunction solar cells