ELECTROPHYSICAL PROPERTIES OF GaAs P-I-N STRUCUTRES FOR CONCENTRATOR SOLAR CELL APPLICATIONS
Arpád Kósa – Miroslav Mikolášek – Lubica Stuchlíková – Ladislav Harmatha – Wojciech Dawidowski – Beata Sciana – Marek Tłaczała
This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (IV) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from IV measurement at 1 and 20 × sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.
Keywords: solar cell, GaAs concentrator solar cell, IV measurement, DLTFS, defects