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[6, 2011] 

Journal of Electrical Engineering, Vol 62, 6 (2011) 367-369; DOI: 10.2478/v10187-011-0059-2

SOME ASPECTS OF QUANTITATIVE ANALYSIS OF TERNARY ALLOYS OF GROUP III-NITRIDES BY AUGER ELECTRON

Jozef LIDAY – Peter VOGRINČIČ – Gernod ECKE

   In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of nitrides AlN, GaN and of their ternary alloys AlxGa1-xN. Measurements of reference samples AlN and GaN under various parameters of the primary electron beam (energy 3 and 5 keV, beam incidence angle with respect to the surface normal 12.5° and 45°) and of the ion beam (energy 0.5 and 1.0 keV, beam incidence angle with respect to the surface normal 67.5° and 35°) allowed to find the elemental sensitivity factors for these nitrides, and measurements on reference samples of ternary alloys AlxGa1-x allowed to find the component sputtering yields YGa/YAl. To the best of our knowledge there is a lack of such data for those materials in the literature.

Keywords: GaN, AlN, AlxGa1-xN, AES relative elemental sensitivity factors, component sputtering yields


[full-paper]


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