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[6, 2013] 

Journal of Electrical Engineering, Vol 64, 6 (2013) 390-392 DOI: 10.2478/jee-2013-0060

IMPROVING THE OHMIC PROPERTIES OF Au/Ni-Mg/p-GaN CONTACTS BY ADDING SWCNT METALLIZATION INTERLAYER BETWEEN METAL AND p-GaN LAYERS

Jozef Liday – Peter Vogrinčič – Viliam Vretenár – Ivan Hotový –
Mário Kotlár – Marián Marton – Vlastimil Řeháček

   We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-O/SWCNT/p-GaN and Au/Ni-Mg-(O)/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at %). The contacts were annealed in N2>/sub>. We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer.

Keywords: p-GaN, Au/Ni-Mg-(O)/p-GaN, Au/Ni-Mg-O/SWCNT/p-GaN, single-walled carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, circular transmission line method (CTLM)


[full-paper]


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