IMPROVING THE OHMIC PROPERTIES OF Au/Ni-Mg/p-GaN CONTACTS BY ADDING SWCNT METALLIZATION INTERLAYER BETWEEN METAL AND p-GaN LAYERS
Jozef Liday – Peter Vogrinčič – Viliam Vretenár – Ivan Hotový –
Mário Kotlár – Marián Marton – Vlastimil Řeháček
We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-O/SWCNT/p-GaN and Au/Ni-Mg-(O)/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at %). The contacts were annealed in N2>/sub>. We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer.
Keywords: p-GaN, Au/Ni-Mg-(O)/p-GaN, Au/Ni-Mg-O/SWCNT/p-GaN, single-walled carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, circular transmission line method (CTLM)